Wavelength dependence of Pockels effect in strained silicon waveguides
نویسندگان
چکیده
منابع مشابه
Modeling of strain-induced Pockels effect in Silicon.
We propose a theoretical model to describe the strain-induced linear electro-optic (Pockels) effect in centro-symmetric crystals. The general formulation is presented and the specific case of the strained silicon is investigated in detail because of its attractive properties for integrated optics. The outcome of this analysis is a linear relation between the second order susceptibility tensor a...
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ژورنال
عنوان ژورنال: Optics Express
سال: 2014
ISSN: 1094-4087
DOI: 10.1364/oe.22.022095